Figure. light-triggered regionally controlled n-doping of organic semiconductors

With the support of the National Natural Science Foundation of China (22020102001, 22335002, and 22071007), a research team led by Professor Pei achieved breakthrough in regionally controlled n-doping of organic semiconductors via a light triggered strategy. These findings, entitled “Light-triggered regionally controlled n-doping of organic semiconductors” were published in Nature on May 28, 2025.

The precision of regional doping resolution directly impacts device dimension and performance in integrated circuit manufacturing. However, conventional doping strategies for organic semiconductors (OSC) remain challenges to achieve high-resolution and regionally controlled doping. To address this challenge, Professor Pei Jian’s research team developed a novel class of inactive photoactivable dopants (iPADs), which can be converted in situ into highly reactive photoactivated dopants (PADs) under light irradiation. The molecular design of iPADs with “thermally inert but photoactivable” characteristics enables a controlled doping process of organic and polymeric semiconductors. These precursors remain chemically inactive during standard micro/nanofabrication processes (e.g., photoresist baking, thermal evaporation) but rapidly convert to highly active dopants (PADs) upon ultraviolet exposure. This allows efficient n-type doping of organic and polymeric semiconductors, with electrical conductivity increasing up to 9 orders of magnitude. By overcoming the limitations of traditional chemical doping in terms of regional resolution and controllability, the team successfully achieved submicron-scale n-type doping with electrical conductivity exceeding 30 S/cm of more than 10 different polymeric semiconductors. The light-controlled doping strategy is fully compatible with standard photolithographic workflows in the semiconductor industry. For the first time, submicron-scale doping resolution has been demonstrated in polymeric materials. This establishes a vital technological foundation for fabricating high-performance organic integrated circuits, with excellent feasibility for industrial implementation. The innovative approach from this work enables efficient, precise, and regionally controlled doping of organic and polymeric semiconductors, enabling photopatterned fabrication of organic integrated circuits, paving the way for revolutionary progress in organic electronics.