Co-funded by NSFC, MOST and CAS, researchers from the Key laboratory of Organic Solids, Institute of Chemistry, CAS, made new progress in organic field-effect transistors (FET). The results of the study were published recently in the journal of Advanced Materials (2008, 20, 1286-1290).

In recent years, due to the potential application of active matrix display and radio frequency tag, organic FET with large area, flexibility and low-cost attracted more concerns from R&D and industrial communities, and obtained considerable developments. At present, the performance of organic FET almost meets the practical requirements. Compared to inorganic FET, organic ones are unique in low-cost and flexibility. The perspective of organic FET’s application and commercialization is largely subject to its cost-lowing.

In the previous research reports, the lab's researchers developed a method of copper and silver modification to replace the source and drain electrodes of organic field effect through which high-performance devices were obtained (J. Am. Chem. Soc. 2006, 128, 16,418). Followed by building the nano-structure electrodes, the relationship of the device performance with the electrode forms was studied (see the cover paper of Phys. Chem. Chem. Phys. 2008, 10, 2302). Recently, the group made new progress in organic FET with low-cost and high-performance. Organic field-effect transistors with the structure of upper electrode were prepared by the use of low work-function copper as the source and drain electrodes. The results have been filed for Chinese patent and published in the journal of Advanced Materials.